page . 1 rev1.0 : oct . 201 1 fea tures ? adva nced t rench proce ss te chnology ? ultra low on re sista nce : 2 ? fa st switching speed : 20n s ? low in put a nd output le ak age current ? 2kv esd protection? spe ci ally de signed f or high speed circuit, battery operated syste m, drivers : la mps, t ra n sistors, relays, me morie s, display , etc.. ? compli a nt to eu rohs dire ctive 2002/95/ec mechanial da ta ? ca se : sot -363 molded pla stic ? t ermin als : solder plated, soldera ble per mil-st d-750, method 2026 ? marking : 702 r ds(on) , v gs @10v , i ds @500ma=2 r ds(on) , v gs @4.5v , i ds @200ma=3 comp any reser ves the right t o improve product design,functions and reliability without notice 60v esd protected n-channel enhancement mode mosfet dimensions in inches (millimeters) 2n7002k dw maximum rating and thermal characteristics ( t c =25 o c unless otherwise noted ) note : 1. m axi mum dc current li mit by the pa ck age 2. surfa ce mounted on fr4 board, t<5se c p a r a m e te r s ym b o l va lue uni ts d ra i n-s o urc e vo lta g e v d s 6 0 v g a te -s o urc e vo lta g e v g s + 2 0 v c o nti nuo us d ra i n c ur re nt t c =2 5 o c i d 11 5 m a p uls e d d r a i n c urr e nt 1 ) i d m 8 5 0 m a m a xi m um p o we r d i s s i p a ti o n d e r a ti ng f a c to r t c =2 5 o c t c = 1 0 0 o c p d 0 .2 0 .0 8 w junction to ambient thermal resistance ( pcb mounte d ) 2) r j a 6 2 5 o c /w o p e r a ti ng j unc ti o n a nd s to r a g e te mp e ra tur e ra ng e t j ,t s tg -5 5 to + 1 5 0 o c sot -363
page . 2 rev1.0 : oct . 201 1 ele ctrical chara cteristics ( t c =25 o c, unle ss otherwise noted ) 2n7002k dw p a r a m e te r s ym b o l te s t c o nd i ti o n m i n. typ . m a x. uni ts s ta ti c d r a i n-s o ur c e b r e a k d o wn vo lta g e b v d s s v gs = 0 v, i d = 2 5 0 ua 6 0 - - v ga te thr e s ho ld vo lta g e v gs (t h) v d s =v gs , i d = 2 5 0 ua 0 .8 - 2 .5 v d r a i n- s o ur c e on- s ta te re s i s ta nc e r d s (o n) v gs = 10v, i d = 500ma - 1.3 2 v gs = 4.5v, i d = 200ma - 1.8 3 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =60v, v gs =0v - - 1 ua gate body leakage i gs s v gs = + 2 0 v, v d s =0 v - - + 1 0 dynamic to ta l ga te c ha r g e q g v d s = 3 0 v, i d =2 0 0 m a v gs = 4 .5 v - 0 .6 0 .8 nc ga te - s o ur c e c ha r g e q g s - 0 .1 6 0 .2 ga te - d r a i n c ha r g e q g d - 0.24 0.32 turn- on ti m e t o n v dd =30v ,i d =200m a v gs =10v , r g =10 - 12.8 20 ns turn- off ti m e t o ff - 2 8 3 8 inp ut c a p a c i ta nc e c i s s v d s = 2 5 v, v gs =0 v f= 1 .0 mh z - 3 6 4 5 p f outp ut c a p a c i ta nc e c o ss - 4.8 9.6 re ve r s e tr a ns fe r c a p a c i ta nc e c r ss - 2.4 4.2 s o ur c e -d r a i n d i o d e ma x. d i o d e f o r wa rd c urre nt i s - - - 3 0 0 m a m a x.p uls e d s o ur c e c ur r e nt i s m - - - 2 0 0 0 m a d i o d e f o r wa r d vo lta g e v s d i s =2 0 0 a , v gs =0 v - 0 .8 4 1 .3 v switching te st circuit gate charge te st circuit
page . 3 rev1.0 : oct . 201 1 ra ting and characteristic cur ves 2n7002k dw t ypical chara cteristics curve ( t c =25 o c, unle ss otherwise noted )
page . 4 rev1.0 : oct . 201 1 ra ting and characteristic cur ves 2n7002k dw t ypical chara cteristics curve ( t c =25 o c, unle ss otherwise noted )
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